SSW2N80A PDF and Equivalents Search

 

SSW2N80A Specs and Replacement

Type Designator: SSW2N80A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm

Package: TO263

SSW2N80A substitution

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SSW2N80A datasheet

 ..1. Size:223K  1
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SSW2N80A

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SSW2N80A

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 9.2. Size:218K  1
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SSW2N80A

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 9.3. Size:647K  fairchild semi
 ssi2n60b ssi2n60b ssw2n60b.pdf pdf_icon

SSW2N80A

November 2001 SSW2N60B / SSI2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12.5 nC) planar, DMOS technology. Low Crss ( typical 7.6 pF) This advanced technology has been especially tailored ... See More ⇒

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Detailed specifications: SSU1N50A , SSU1N60A , SSU2N60A , SSU3055A , SSU3055LA , SSW1N50A , SSW1N60A , SSW2N60A , 12N60 , SSW2N90A , SSW3N80A , SSW3N90A , SSW4N60A , SSW4N80A , SSW4N80AS , SSW4N90A , SSW4N90AS .

Keywords - SSW2N80A MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 


 
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