HSP4048 MOSFET. Datasheet pdf. Equivalent
Type Designator: HSP4048
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 178 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 210 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 45 nC
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 1119 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0018 Ohm
Package: TO220
HSP4048 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSP4048 Datasheet (PDF)
hsp4048.pdf
HSP4048 N-Ch 40V Fast Switching MOSFETs Product Summary General Description VDS 40 V 100% UIS Tested Advanced Trench Technology RDS(ON),max 1.8 m Low Gate Charge High Current Capability ID 210 A RoHS and Halogen-Free Compliant Applications TO-220 Pin Configuration SMPS Synchronous Rectification DC/DC Converters Or-ing Absolute
hsp4024a.pdf
HSP4024A N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSP4024A is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 3.3 m converter applications. ID 165 A The HSP4024A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re
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