All MOSFET. HSP6024A Datasheet

 

HSP6024A MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSP6024A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 200 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 83.7 nC
   Rise Time (tr): 73.3 nS
   Drain-Source Capacitance (Cd): 571 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0048 Ohm
   Package: TO220

 HSP6024A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSP6024A Datasheet (PDF)

 ..1. Size:551K  huashuo
hsp6024a.pdf

HSP6024A
HSP6024A

HSP6024A N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSP6024A is the high cell density trenched VDS 60 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),max 4.8 m synchronous buck converter applications. ID 200 A The HSP6024A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function relia

 9.1. Size:572K  huashuo
hsp6040.pdf

HSP6024A
HSP6024A

HSP6040 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSP6040 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 5.2 m gate charge for most of the synchronous buck converter applications. ID 140 A The HSP6040 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabi

 9.2. Size:742K  huashuo
hsp6032a.pdf

HSP6024A
HSP6024A

HSP6032A N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSP6032A is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 7.1 m converter applications. ID 75 A The HSP6032A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab

 9.3. Size:501K  huashuo
hsp6016.pdf

HSP6024A
HSP6024A

HSP6016 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSP6016 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous RDS(ON),max 12 m buck converter applications. ID 60 A The HSP6016 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabi

 9.4. Size:819K  huashuo
hsp6048.pdf

HSP6024A
HSP6024A

HSP6048 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSP6048 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),TYP 3 m converter applications. ID 150 A The HSP6048 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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