HSP6024A
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HSP6024A
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 260
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 200
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 83.7
nC
trⓘ -
Время нарастания: 73.3
ns
Cossⓘ - Выходная емкость: 571
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0048
Ohm
Тип корпуса:
TO220
Аналог (замена) для HSP6024A
HSP6024A
Datasheet (PDF)
..1. Size:551K huashuo
hsp6024a.pdf HSP6024A N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSP6024A is the high cell density trenched VDS 60 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),max 4.8 m synchronous buck converter applications. ID 200 A The HSP6024A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function relia
9.1. Size:572K huashuo
hsp6040.pdf HSP6040 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSP6040 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 5.2 m gate charge for most of the synchronous buck converter applications. ID 140 A The HSP6040 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabi
9.2. Size:742K huashuo
hsp6032a.pdf HSP6032A N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSP6032A is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 7.1 m converter applications. ID 75 A The HSP6032A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab
9.3. Size:501K huashuo
hsp6016.pdf HSP6016 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSP6016 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous RDS(ON),max 12 m buck converter applications. ID 60 A The HSP6016 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabi
9.4. Size:819K huashuo
hsp6048.pdf HSP6048 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSP6048 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),TYP 3 m converter applications. ID 150 A The HSP6048 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability
Другие MOSFET... FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, GMM3x120-0075X2-SMD
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, STP80NF70
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
, FDMS3610S
, GWM100-0085X1-SMD
, FDMS3606S
, GWM100-01X1-SL
.