HSP8004 Datasheet and Replacement
Type Designator: HSP8004
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 175 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 800 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO220
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HSP8004 Datasheet (PDF)
hsp8004.pdf

HSP8004 N-Ch 80V Fast Switching MOSFETs Description Product Summary V 80 V DSThe HSP8004 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and R 3.1 m DS(ON),TYPgate charge for most of the synchronous buck converter applications. I 175 A DThe HSP8004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function
hsp80p10.pdf

HSP80P10 P-Ch 100V Fast Switching MOSFETs Description Product Summary The HSP80P10 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),typ 20 m charge for use in a wide variety of other applications. ID -80 A The HSP80P10 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SFFX054Z | CHM85A3PAGP | TK7P65W | SQ9407EY-T1
Keywords - HSP8004 MOSFET datasheet
HSP8004 cross reference
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History: SFFX054Z | CHM85A3PAGP | TK7P65W | SQ9407EY-T1



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