HSP8004 Specs and Replacement

Type Designator: HSP8004

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 175 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: TO220

HSP8004 substitution

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HSP8004 datasheet

 ..1. Size:770K  huashuo
 hsp8004.pdf pdf_icon

HSP8004

HSP8004 N-Ch 80V Fast Switching MOSFETs Description Product Summary V 80 V DS The HSP8004 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and R 3.1 m DS(ON),TYP gate charge for most of the synchronous buck converter applications. I 175 A D The HSP8004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function ... See More ⇒

 9.1. Size:799K  huashuo
 hsp80p10.pdf pdf_icon

HSP8004

HSP80P10 P-Ch 100V Fast Switching MOSFETs Description Product Summary The HSP80P10 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),typ 20 m charge for use in a wide variety of other applications. ID -80 A The HSP80P10 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.... See More ⇒

Detailed specifications: HSP4024A, HSP4048, HSP6016, HSP6024A, HSP6032A, HSP6040, HSP6048, HSP6115, IRFP250, HSP80P10, HSP8N50, HSS0008, HSS0127, HSS1N20, HSS2012, HSS2300A, HSS2301B

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.