All MOSFET. SSW3N80A Datasheet

 

SSW3N80A Datasheet and Replacement


   Type Designator: SSW3N80A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
   Package: TO263
 

 SSW3N80A substitution

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SSW3N80A Datasheet (PDF)

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SSW3N80A

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SSW3N80A

 9.2. Size:508K  samsung
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SSW3N80A

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 6.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V2 Low RDS(ON) : 4.679 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charact

Datasheet: SSU2N60A , SSU3055A , SSU3055LA , SSW1N50A , SSW1N60A , SSW2N60A , SSW2N80A , SSW2N90A , IRF530 , SSW3N90A , SSW4N60A , SSW4N80A , SSW4N80AS , SSW4N90A , SSW4N90AS , SSW5N80A , SSW5N90A .

Keywords - SSW3N80A MOSFET datasheet

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