All MOSFET. SSW3N80A Datasheet

 

SSW3N80A MOSFET. Datasheet pdf. Equivalent

Type Designator: SSW3N80A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 585 pF

Maximum Drain-Source On-State Resistance (Rds): 4.8 Ohm

Package: TO263

SSW3N80A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SSW3N80A Datasheet (PDF)

5.1. ssw3n90a.pdf Size:508K _samsung

SSW3N80A
SSW3N80A

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 6.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V 2 Low RDS(ON) : 4.679 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic

Datasheet: SSU2N60A , SSU3055A , SSU3055LA , SSW1N50A , SSW1N60A , SSW2N60A , SSW2N80A , SSW2N90A , J310 , SSW3N90A , SSW4N60A , SSW4N80A , SSW4N80AS , SSW4N90A , SSW4N90AS , SSW5N80A , SSW5N90A .

 


SSW3N80A
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