SSW3N80A Specs and Replacement
Type Designator: SSW3N80A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
Package: TO263
SSW3N80A substitution
- MOSFET ⓘ Cross-Reference Search
SSW3N80A datasheet
ssw3n90a.pdf
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 6.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V 2 Low RDS(ON) 4.679 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charact... See More ⇒
Detailed specifications: SSU2N60A , SSU3055A , SSU3055LA , SSW1N50A , SSW1N60A , SSW2N60A , SSW2N80A , SSW2N90A , IRF1010E , SSW3N90A , SSW4N60A , SSW4N80A , SSW4N80AS , SSW4N90A , SSW4N90AS , SSW5N80A , SSW5N90A .
Keywords - SSW3N80A MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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