SSW3N90A PDF and Equivalents Search

 

SSW3N90A Specs and Replacement

Type Designator: SSW3N90A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6.2 Ohm

Package: TO263

SSW3N90A substitution

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SSW3N90A datasheet

 ..1. Size:202K  1
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SSW3N90A

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 ..2. Size:508K  samsung
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SSW3N90A

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 6.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V 2 Low RDS(ON) 4.679 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charact... See More ⇒

 9.1. Size:228K  1
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SSW3N90A

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Detailed specifications: SSU3055A , SSU3055LA , SSW1N50A , SSW1N60A , SSW2N60A , SSW2N80A , SSW2N90A , SSW3N80A , IRFB3607 , SSW4N60A , SSW4N80A , SSW4N80AS , SSW4N90A , SSW4N90AS , SSW5N80A , SSW5N90A , SSW6N70A .

History: SSW1N60A

Keywords - SSW3N90A MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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