HSS4002 MOSFET. Datasheet pdf. Equivalent
Type Designator: HSS4002
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5.5 nC
trⓘ - Rise Time: 2.2 nS
Cossⓘ - Output Capacitance: 76 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: SOT23
HSS4002 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSS4002 Datasheet (PDF)
hss4002.pdf
HSS4002 N-Ch 40V Fast Switching MOSFETs Description Product Summary VDS 40 V The HSS4002 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON RDS(ON),max 32 m and efficiency for most of the small power switching and load switch applications. ID 5 A The HSS4002 meet the RoHS and Green Product requirement with full function reliability approved.
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
