HSSC3134 Datasheet and Replacement
Type Designator: HSSC3134
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 0.77 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 4.5 nS
Cossⓘ - Output Capacitance: 15 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm
Package: SOT723
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HSSC3134 Datasheet (PDF)
hssc3134.pdf

HSSC3134 N-Ch 20V Fast Switching MOSFETs Product Summary Description The HSSC3134 is the high cell density trenched VDS 20 V N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small RDS(ON),max 370 m power switching and load switch applications. ID 0.77 A The HSSC3134 meets the RoHS and Green Product requirement with full function reliability
hssc3139.pdf

HSSC3139 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSSC3139 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 400 m converter applications. ID -0.65 A The HSSC3139 meet the RoHS and Green Product requirement with full function reliability approved.
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: AP65SL190DWL | IPW50R190CE | UPA1774G | RU35122R | PJF7NA80 | SWB051R08ES | TK7A65W
Keywords - HSSC3134 MOSFET datasheet
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History: AP65SL190DWL | IPW50R190CE | UPA1774G | RU35122R | PJF7NA80 | SWB051R08ES | TK7A65W



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