HSSC3134 Datasheet and Replacement
Type Designator: HSSC3134
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.77 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.5 nS
Cossⓘ - Output Capacitance: 15 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm
Package: SOT723
HSSC3134 substitution
HSSC3134 Datasheet (PDF)
hssc3134.pdf

HSSC3134 N-Ch 20V Fast Switching MOSFETs Product Summary Description The HSSC3134 is the high cell density trenched VDS 20 V N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small RDS(ON),max 370 m power switching and load switch applications. ID 0.77 A The HSSC3134 meets the RoHS and Green Product requirement with full function reliability
hssc3139.pdf

HSSC3139 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSSC3139 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 400 m converter applications. ID -0.65 A The HSSC3139 meet the RoHS and Green Product requirement with full function reliability approved.
Datasheet: HSS3409A , HSS3414A , HSS3415E , HSS3416E , HSS3N10 , HSS4002 , HSS6014 , HSS6107 , 5N50 , HSSC3139 , HSSK6303 , HSSK8811 , HSSN3134 , HSSN3139 , HSST3134 , HSST3139 , HSU0004 .
History: AP65SL190DWL | CS9N90F | IPD50N06S2L-13 | NVMFS6H864N | 2N65KG-TA3-T | SL2305 | AP4226BGM-HF
Keywords - HSSC3134 MOSFET datasheet
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History: AP65SL190DWL | CS9N90F | IPD50N06S2L-13 | NVMFS6H864N | 2N65KG-TA3-T | SL2305 | AP4226BGM-HF



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