All MOSFET. HSST3134 Datasheet

 

HSST3134 Datasheet and Replacement


   Type Designator: HSST3134
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.9 nS
   Cossⓘ - Output Capacitance: 107 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: SOT523
 

 HSST3134 substitution

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HSST3134 Datasheet (PDF)

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HSST3134

HSST3134 N-Ch 20V Fast Switching MOSFETs Product Summary Description The HSST3134 is the high cell density trenched VDS 20 V N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small RDS(ON),typ 280 m power switching and load switch applications. ID 0.9 A The HSST3134 meets the RoHS and Green Product requirement with full function reliability

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HSST3134

HSST3139 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSST3139 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 230 m converter applications. ID -1.0 A The HSST3139 meet the RoHS and Green Product requirement with full function reliability approved.

Datasheet: HSS6014 , HSS6107 , HSSC3134 , HSSC3139 , HSSK6303 , HSSK8811 , HSSN3134 , HSSN3139 , IRF840 , HSST3139 , HSU0004 , HSU0018A , HSU0026 , HSU0048 , HSU0115 , HSU0139 , HSU100P03 .

Keywords - HSST3134 MOSFET datasheet

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