HSU0115 Datasheet and Replacement
Type Designator: HSU0115
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 27.4 nS
Cossⓘ - Output Capacitance: 129 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: TO252
HSU0115 substitution
HSU0115 Datasheet (PDF)
hsu0115.pdf

HSU0115 P-Ch 100V Fast Switching MOSFETs Product Summary Description The HSU0115 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),typ 78 m charge for use in a wide variety of other applications. ID -18 A The HSU0115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
hsu0139.pdf

HSU0139 P-Ch 100V Fast Switching MOSFETs Description Product Summary The HSU0139 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),typ 42 m charge for use in a wide variety of other applications. ID -30 A The HSU0139 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Datasheet: HSSN3134 , HSSN3139 , HSST3134 , HSST3139 , HSU0004 , HSU0018A , HSU0026 , HSU0048 , IRFZ44 , HSU0139 , HSU100P03 , HSU1241 , HSU12N10 , HSU150N03 , HSU16N25 , HSU18N20 , HSU20N15A .
History: AM2344N
Keywords - HSU0115 MOSFET datasheet
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History: AM2344N



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