All MOSFET. HSU0115 Datasheet

 

HSU0115 Datasheet and Replacement


   Type Designator: HSU0115
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27.4 nS
   Cossⓘ - Output Capacitance: 129 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TO252
 

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HSU0115 Datasheet (PDF)

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HSU0115

HSU0115 P-Ch 100V Fast Switching MOSFETs Product Summary Description The HSU0115 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),typ 78 m charge for use in a wide variety of other applications. ID -18 A The HSU0115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

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HSU0115

HSU0139 P-Ch 100V Fast Switching MOSFETs Description Product Summary The HSU0139 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),typ 42 m charge for use in a wide variety of other applications. ID -30 A The HSU0139 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

Datasheet: HSSN3134 , HSSN3139 , HSST3134 , HSST3139 , HSU0004 , HSU0018A , HSU0026 , HSU0048 , IRFZ44 , HSU0139 , HSU100P03 , HSU1241 , HSU12N10 , HSU150N03 , HSU16N25 , HSU18N20 , HSU20N15A .

History: IPB065N15N3G | MMFT2406T1 | LND06R062 | 6N65KG-TF1-T | TPP65R750C | IRFZ14L | SQ4410EY

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