All MOSFET. HSU0115 Datasheet

 

HSU0115 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSU0115
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 44.5 nC
   trⓘ - Rise Time: 27.4 nS
   Cossⓘ - Output Capacitance: 129 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TO252

 HSU0115 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSU0115 Datasheet (PDF)

 ..1. Size:760K  huashuo
 hsu0115.pdf

HSU0115 HSU0115

HSU0115 P-Ch 100V Fast Switching MOSFETs Product Summary Description The HSU0115 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),typ 78 m charge for use in a wide variety of other applications. ID -18 A The HSU0115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

 9.1. Size:847K  huashuo
 hsu0139.pdf

HSU0115 HSU0115

HSU0139 P-Ch 100V Fast Switching MOSFETs Description Product Summary The HSU0139 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),typ 42 m charge for use in a wide variety of other applications. ID -30 A The HSU0139 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2N65KL-TN3-R

 

 
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