SSW4N80AS MOSFET Datasheet: N-Ch, 800V, 4.5A. Full specification with pinout and replacement list

SSW4N80AS Specs and Replacement

Type Designator: SSW4N80AS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO263

SSW4N80AS substitution

- MOSFET ⓘ Cross-Reference Search

SSW4N80AS datasheet

..1. Size:183K 1
ssi4n80as ssw4n80as.pdf pdf_icon

... See More ⇒

..2. Size:881K samsung
ssw4n80as.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V 2 Low RDS(ON) 2.450 (Typ.)c 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha... See More ⇒

6.1. Size:184K 1
ssi4n80a ssw4n80a.pdf pdf_icon

... See More ⇒

6.2. Size:507K samsung
ssw4n80a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V 2 Low RDS(ON) 3.400 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charact... See More ⇒