All MOSFET. SSW4N80AS Datasheet

 

SSW4N80AS Datasheet and Replacement


   Type Designator: SSW4N80AS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO263
 

 SSW4N80AS substitution

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SSW4N80AS Datasheet (PDF)

 ..1. Size:183K  1
 ssi4n80as ssw4n80as.pdf pdf_icon

SSW4N80AS

 ..2. Size:881K  samsung
 ssw4n80as.pdf pdf_icon

SSW4N80AS

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V2 Low RDS(ON) : 2.450 (Typ.)c112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

 6.1. Size:184K  1
 ssi4n80a ssw4n80a.pdf pdf_icon

SSW4N80AS

 6.2. Size:507K  samsung
 ssw4n80a.pdf pdf_icon

SSW4N80AS

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V2 Low RDS(ON) : 3.400 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charact

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Datasheet: SSW1N60A , SSW2N60A , SSW2N80A , SSW2N90A , SSW3N80A , SSW3N90A , SSW4N60A , SSW4N80A , 5N65 , SSW4N90A , SSW4N90AS , SSW5N80A , SSW5N90A , SSW6N70A , SSW7N60A , STD10N10-1 , STD10N10L-1 .

History: FCH76N60N

Keywords - SSW4N80AS MOSFET datasheet

 SSW4N80AS cross reference
 SSW4N80AS equivalent finder
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