All MOSFET. HSU20N15A Datasheet

 

HSU20N15A MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSU20N15A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 72.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 23 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23 nC
   trⓘ - Rise Time: 18.6 nS
   Cossⓘ - Output Capacitance: 73 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
   Package: TO252

 HSU20N15A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSU20N15A Datasheet (PDF)

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 hsu20n15a.pdf

HSU20N15A HSU20N15A

HSU20N15A N-Ch 150V Fast Switching MOSFETs Description Product Summary VDS 150 V The HSU20N15A is the highest performance trench N-ch MOSFETs with extreme high cell RDS(ON),typ 47 m density, which provide excellent RDSON and gate charge for most of the synchronous buck ID 23 A converter applications. The HSU20N15A meet the RoHS and Green Product requirement, 100% EAS g

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