HSU3103 Datasheet and Replacement
Type Designator: HSU3103
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 34.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11.2 nS
Cossⓘ - Output Capacitance: 194 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO252
HSU3103 Datasheet (PDF)
hsu3103.pdf

HSU3103 P-Ch 30V Fast Switching MOSFETs Description Product Summary V -30 V DS The HSU3103 is the high cell density trenched P- ch MOSFETs, which provide excellent RDSON and R 20 m DS(ON),max gate charge for most of the synchronous buck converter applications. I -35 A D The HSU3103 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full f
Datasheet: HSU16N25 , HSU18N20 , HSU20N15A , HSU3006 , HSU3014 , HSU3016 , HSU3018B , HSU3031 , IRFB4115 , HSU3903 , HSU4004 , HSU4006 , HSU4016 , HSU4094 , HSU4103 , HSU4113 , HSU4115 .
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