All MOSFET. HSU3103 Datasheet

 

HSU3103 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSU3103
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 34.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.5 nC
   trⓘ - Rise Time: 11.2 nS
   Cossⓘ - Output Capacitance: 194 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO252

 HSU3103 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSU3103 Datasheet (PDF)

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 hsu3103.pdf

HSU3103 HSU3103

HSU3103 P-Ch 30V Fast Switching MOSFETs Description Product Summary V -30 V DS The HSU3103 is the high cell density trenched P- ch MOSFETs, which provide excellent RDSON and R 20 m DS(ON),max gate charge for most of the synchronous buck converter applications. I -35 A D The HSU3103 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full f

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