All MOSFET. HSU3903 Datasheet

 

HSU3903 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSU3903
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.2 nC
   trⓘ - Rise Time: 9.8 nS
   Cossⓘ - Output Capacitance: 81 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO252-4

 HSU3903 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSU3903 Datasheet (PDF)

 ..1. Size:910K  huashuo
 hsu3903.pdf

HSU3903 HSU3903

HSU3903 N-Ch and P-Ch Fast Switching MOSFETs Description Product Summary The HSU3903 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with high cell density, which provide excellent RDSON and 30V 18m 30A gate charge for most of the synchronous buck -30V 30m -24A converter applications. The HSU3903 meet the RoHS and Green Product requirement 1

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top