All MOSFET. HSU4903 Datasheet

 

HSU4903 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSU4903
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 23 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.5 nC
   trⓘ - Rise Time: 2.2 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO252-4

 HSU4903 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSU4903 Datasheet (PDF)

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hsu4903.pdf

HSU4903
HSU4903

HSU4903 N-Ch and P-Ch Fast Switching MOSFETs Description Product Summary The HSU4903 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with 40V 30m 23A high cell density, which provide excellent -40V 45m -20A RDSON and gate charge for most of the synchronous buck converter applications. The HSU4903 meet the RoHS and Green Product requirement

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