All MOSFET. HSU6115 Datasheet

 

HSU6115 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSU6115
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 52.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 23.6 nS
   Cossⓘ - Output Capacitance: 224 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO252

 HSU6115 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSU6115 Datasheet (PDF)

 ..1. Size:2267K  huashuo
 hsu6115.pdf

HSU6115 HSU6115

HSU6115 P-Ch 60V Fast Switching MOSFETs Description Product Summary VDS -60 V The HSU6115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON RDS(ON),max 25 m and gate charge for most of the synchronous buck converter applications. ID -35 A The HSU6115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabil

 8.1. Size:2277K  huashuo
 hsu6113.pdf

HSU6115 HSU6115

HSU6113 P-Ch 60V Fast Switching MOSFETs Product Summary Description The HSU6113 is the high cell density trenched P- VDS -60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 90 m gate charge for most of the synchronous buck converter applications. ID -13 A The HSU6113 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabi

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History: 2SK1271

 

 
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