All MOSFET. HSU6115 Datasheet

 

HSU6115 Datasheet and Replacement


   Type Designator: HSU6115
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 52.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 23.6 nS
   Cossⓘ - Output Capacitance: 224 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO252
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HSU6115 Datasheet (PDF)

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HSU6115

HSU6115 P-Ch 60V Fast Switching MOSFETs Description Product Summary VDS -60 V The HSU6115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON RDS(ON),max 25 m and gate charge for most of the synchronous buck converter applications. ID -35 A The HSU6115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabil

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HSU6115

HSU6113 P-Ch 60V Fast Switching MOSFETs Product Summary Description The HSU6113 is the high cell density trenched P- VDS -60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 90 m gate charge for most of the synchronous buck converter applications. ID -13 A The HSU6113 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabi

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History: FDMS9620S | WMM11N80M3 | IRFI7536G

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