HSW6811 PDF and Equivalents Search

 

HSW6811 Specs and Replacement

Type Designator: HSW6811

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 54 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: SOT23-6

HSW6811 substitution

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HSW6811 datasheet

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HSW6811

HSW6811 Dual P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSW6811 is the high cell density trenched P- VDS -20 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),typ 115 m and load switch applications. ID -2 A The HSW6811 meet the RoHS and Green Product requirement with full function reliability appro... See More ⇒

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HSW6811

HSW6800 Dual N-CH Fast Switching MOSFETs Product Summary Description The HSW6800 is the high cell density trenched N- VDS 30 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),max 45 m and load switch applications. ID 4 A The HSW6800 meet the RoHS and Green Product requirement with full function reliability approved... See More ⇒

Detailed specifications: HSU80N03, HSU90N02, HSU90N03, HSW2N15, HSW3415, HSW4602, HSW6604, HSW6800, TK10A60D, HSW8205, HSW8810, MMN1000DB010B, MMN200H010X, FTB07N08N, FTP02N04NA, RU20P7C-I, HX2300

Keywords - HSW6811 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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