All MOSFET. HSW6811 Datasheet

 

HSW6811 Datasheet and Replacement


   Type Designator: HSW6811
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SOT23-6
 

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HSW6811 Datasheet (PDF)

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HSW6811

HSW6811 Dual P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSW6811 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),typ 115 m and load switch applications. ID -2 A The HSW6811 meet the RoHS and Green Product requirement with full function reliability appro

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HSW6811

HSW6800 Dual N-CH Fast Switching MOSFETs Product Summary Description The HSW6800 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),max 45 m and load switch applications. ID 4 A The HSW6800 meet the RoHS and Green Product requirement with full function reliability approved

Datasheet: HSU80N03 , HSU90N02 , HSU90N03 , HSW2N15 , HSW3415 , HSW4602 , HSW6604 , HSW6800 , IRFZ24N , HSW8205 , HSW8810 , MMN1000DB010B , MMN200H010X , FTB07N08N , FTP02N04NA , RU20P7C-I , HX2300 .

History: CS6N70A3D-G | HGN110N10SL | IRFS644B | SE60120GTS | AOW284 | AON6912A | AUIRFB3004

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