All MOSFET. FTB07N08N Datasheet

 

FTB07N08N Datasheet and Replacement


   Type Designator: FTB07N08N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 65.6 nS
   Cossⓘ - Output Capacitance: 494.4 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO263
 

 FTB07N08N substitution

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FTB07N08N Datasheet (PDF)

 ..1. Size:225K  inpower semi
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FTB07N08N

FTB07N08N N-Channel MOSFET Lead Free Package and Finish Applications: Adaptor VDSS RDS(ON)(Typ.) ID Charger SMPS 85V 6m 120A Features: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Ordering Information PART NUMBER PACKAGE BRAND FTB07N08N TO-263 IPS Absolute Maxim

Datasheet: HSW4602 , HSW6604 , HSW6800 , HSW6811 , HSW8205 , HSW8810 , MMN1000DB010B , MMN200H010X , IRF1407 , FTP02N04NA , RU20P7C-I , HX2300 , HX2300A , SVF2N70MN , SVF3878PN , SVF3N80M , SVF3N80MJ .

History: AO3434A | AO3434 | SI7905DN | AO3424

Keywords - FTB07N08N MOSFET datasheet

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