FTB07N08N MOSFET. Datasheet pdf. Equivalent
Type Designator: FTB07N08N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 74.4 nC
trⓘ - Rise Time: 65.6 nS
Cossⓘ - Output Capacitance: 494.4 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO263
FTB07N08N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FTB07N08N Datasheet (PDF)
..1. Size:225K inpower semi
ftb07n08n.pdf
ftb07n08n.pdf
FTB07N08N N-Channel MOSFET Lead Free Package and Finish Applications: Adaptor VDSS RDS(ON)(Typ.) ID Charger SMPS 85V 6m 120A Features: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Ordering Information PART NUMBER PACKAGE BRAND FTB07N08N TO-263 IPS Absolute Maxim
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