FTB07N08N Specs and Replacement
Type Designator: FTB07N08N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65.6 nS
Cossⓘ - Output Capacitance: 494.4 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO263
FTB07N08N substitution
- MOSFET ⓘ Cross-Reference Search
FTB07N08N datasheet
ftb07n08n.pdf
FTB07N08N N-Channel MOSFET Lead Free Package and Finish Applications Adaptor VDSS RDS(ON)(Typ.) ID Charger SMPS 85V 6m 120A Features RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Ordering Information PART NUMBER PACKAGE BRAND FTB07N08N TO-263 IPS Absolute Maxim... See More ⇒
Detailed specifications: HSW4602, HSW6604, HSW6800, HSW6811, HSW8205, HSW8810, MMN1000DB010B, MMN200H010X, IRF1407, FTP02N04NA, RU20P7C-I, HX2300, HX2300A, SVF2N70MN, SVF3878PN, SVF3N80M, SVF3N80MJ
Keywords - FTB07N08N MOSFET specs
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FTB07N08N replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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