SVF3N80MJ Specs and Replacement
Type Designator: SVF3N80MJ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30.53 nS
Cossⓘ - Output Capacitance: 42.7 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
Package: TO251J
SVF3N80MJ substitution
- MOSFET ⓘ Cross-Reference Search
SVF3N80MJ datasheet
svf3n80m svf3n80mj svf3n80f svf3n80d svf3n80t.pdf
SVF3N80M/MJ/F/D 3A 800V N SVF3N80M/MJ/F/D N MOS F-CellTM VDMOS AC-DC... See More ⇒
Detailed specifications: FTB07N08N, FTP02N04NA, RU20P7C-I, HX2300, HX2300A, SVF2N70MN, SVF3878PN, SVF3N80M, 20N50, SVF3N80T, SVF3N80F, SVF3N80D, SVF4N60D, SVF4N60T, SVF4N60M, SVF4N60F, SVF4N60RDM
Keywords - SVF3N80MJ MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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