SVF4N60D MOSFET. Datasheet pdf. Equivalent

   Type Designator: SVF4N60D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 77 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.16 nC
   trⓘ - Rise Time: 37.3 nS
   Cossⓘ - Output Capacitance: 57 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO252

SVF4N60D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SVF4N60D Datasheet (PDF)

..1. Size:800K silan
svf4n60d svf4n60f svf4n60t svf4n60m.pdf

SVF4N60D/F/T/M 4A600V N SVF4N60D/F/T/M N MOS F-CellTM VDMOS

0.1. Size:479K silan
svf4n60f svf4n60t svf4n60dtr svf4n60m.pdf

SVF4N60D/F/T/M 4A600V N 2SVF4N60D/F/T/M N MOS F-CellTM VDMOS 113TO-252-2L3

7.1. Size:801K 1
svf4n60caf svf4n60cak svf4n60cad svf4n60cat svf4n60camn svf4n60camj.pdf

SVF4N60CAF/K/D/T/MN/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switc

7.2. Size:473K silan
svf4n60caf svf4n60cak svf4n60cat svf4n60cadtr svf4n60camn svf4n60camj.pdf