SVF4N65CAMJ Specs and Replacement
Type Designator: SVF4N65CAMJ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 79 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22.3 nS
Cossⓘ - Output Capacitance: 55 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
Package: TO251J
SVF4N65CAMJ substitution
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SVF4N65CAMJ datasheet
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SVF4N65CAF/D/M/MJ/MN/K 4A 650V N 2 SVF4N65CAF/D/M/MJ/MN/K N MOS 1 F-CellTM VDMOS 3 1. 2. 3... See More ⇒
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SVF4N65CAF/D/M/MJ/MN/K 4A 650V N 2 SVF4N65CAF/D/M/MJ/MN/K N MOS F-CellTM VDMOS 1 3 1.... See More ⇒
Detailed specifications: SVF4N60T, SVF4N60M, SVF4N60F, SVF4N60RDM, SVF4N60RD, SVF4N65CAF, SVF4N65CAD, SVF4N65CAM, 7N60, SVF4N65CAMN, SVF4N65CAK, SVF4N65D, SVF4N65RD, SVF4N65RM, SVF4N65RMJ, SVF4N65RF, SVF4N65RT
Keywords - SVF4N65CAMJ MOSFET specs
SVF4N65CAMJ cross reference
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SVF4N65CAMJ replacement
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