SVF4N65D PDF and Equivalents Search

 

SVF4N65D Specs and Replacement

Type Designator: SVF4N65D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 77 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25.6 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm

Package: TO252

SVF4N65D substitution

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SVF4N65D datasheet

 ..3. Size:620K  silan
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SVF4N65D

SVF4N65T/F/M/MJ/D/K 4A 650V N 2 SVF4N65T/F/M/MJ/D/K N MOS 1 2 3 F-CellTM VDMOS TO-251J-3L 1 3 ... See More ⇒

Detailed specifications: SVF4N60RDM, SVF4N60RD, SVF4N65CAF, SVF4N65CAD, SVF4N65CAM, SVF4N65CAMJ, SVF4N65CAMN, SVF4N65CAK, IRF830, SVF4N65RD, SVF4N65RM, SVF4N65RMJ, SVF4N65RF, SVF4N65RT, SVF5N60K, SVF5N65D, SVF5N65F

Keywords - SVF4N65D MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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