SVF4N65RMJ MOSFET. Datasheet pdf. Equivalent

   Type Designator: SVF4N65RMJ
   Marking Code: 4N65RMJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 77 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
   Package: TO251J

SVF4N65RMJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SVF4N65RMJ Datasheet (PDF)

..1. Size:672K silan
svf4n65rd svf4n65rm svf4n65rmj svf4n65rf svf4n65rt.pdf

SVF4N65RD/M/MJ/F/T 4A650V N 2SVF4N65RD/M/MJ/F/T N MOS F-CellTM VDMOS 113TO-252-2L3

..2. Size:433K silan
svf4n65rdtr svf4n65rm svf4n65rmj svf4n65rf svf4n65rt.pdf

SVF4N65RD/M/MJ/F/T 4A650V N 2SVF4N65RD/M/MJ/F/T N MOS F-CellTM VDMOS 113TO-252-2L3

7.1. Size:449K silan
svf4n65f svf4n65mj svf4n65m svf4n65dtr.pdf

SVF4N65F/M/MJ/D 4A650V N 2SVF4N65F/M/MJ/D N MOS F-CellTM VDMOS 1 31. 2.

7.2. Size:697K silan
svf4n65f svf4n65m svf4n65mj svf4n65d.pdf

SVF4N65F/M/MJ/D 4A650V N SVF4N65F/M/MJ/D N MOS F-CellTM VDMOS AC-DC

7.3. Size:642K silan
svf4n65.pdf

SVF4N65T/F(G)/M_Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65T/F(G)/M is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior

7.4. Size:314K silan
svf4n65caf svf4n65cad svf4n65cam svf4n65camj.pdf