SVF6N60F MOSFET. Datasheet pdf. Equivalent

   Type Designator: SVF6N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.32 nC
   trⓘ - Rise Time: 42.67 nS
   Cossⓘ - Output Capacitance: 83.6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO220F

SVF6N60F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SVF6N60F Datasheet (PDF)

..1. Size:452K silan
svf6n60f svf6n60dtr svf6n60fq.pdf

SVF6N60F/D/FQ 6A600V N 2SVF6N60F/D/FQ N MOS F-CellTM VDMOS 11 3 TO-252-2L3

..2. Size:547K silan
svf6n60mj svf6n60f svf6n60d.pdf

SVF6N60MJ/F/D_Datasheet 6A 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N60MJ/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior swit

9.1. Size:344K silan
svf6n80dtr svf6n80k svf6n80mj.pdf