SVF7N60CF Datasheet and Replacement
Type Designator: SVF7N60CF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 32.7 nS
Cossⓘ - Output Capacitance: 96 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO220F
SVF7N60CF substitution
SVF7N60CF Datasheet (PDF)
svf7n60cf svf7n60cs svf7n60ck svf7n60cmj svf7n60cd svf7n60ct.pdf

SVF7N60CF/S/K/MJ/D/T 7A600V N SVF7N60CF/S/K/MJ/D/T N MOS F-CellTM VDMOS
svf7n60cf svf7n60cs svf7n60cstr svf7n60ck svf7n60cmj svf7n60cd svf7n60cdtr svf7n60ct.pdf

SVF7N60CF/S/K/MJ/D/T 7A600V N 2 SVF7N60CF/S/K/MJ/D/T N MOS 1213 F-CellTM VDMOS TO-251J-3L3
svf7n60f svf7n60s svf7n60d.pdf

SVF7N60F/S/D 7A600V N SVF7N60F/S/D N MOS F-CellTM VDMOS AC-DC
svf7n60t svf7n60f.pdf

SVF7N60T/F_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching
Datasheet: SVF5N60K , SVF5N65D , SVF5N65F , SVF6N60MJ , SVF6N60F , SVF6N60D , SVF6N70F , SVF740MJ , IRFP064N , SVF7N60CS , SVF7N60CK , SVF7N60CMJ , SVF7N60CD , SVF7N60CT , SVF7N60F , SVF7N60S , SVF7N60D .
History: NCE1503S | BLF888A | STD65N55LF3
Keywords - SVF7N60CF MOSFET datasheet
SVF7N60CF cross reference
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History: NCE1503S | BLF888A | STD65N55LF3



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