All MOSFET. SVF7N60S Datasheet

 

SVF7N60S Datasheet and Replacement


   Type Designator: SVF7N60S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 122 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 21.1 nC
   tr ⓘ - Rise Time: 32.7 nS
   Cossⓘ - Output Capacitance: 96 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO263
 

 SVF7N60S substitution

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SVF7N60S Datasheet (PDF)

 ..1. Size:512K  silan
 svf7n60f svf7n60s svf7n60d.pdf pdf_icon

SVF7N60S

SVF7N60F/S/D 7A600V N SVF7N60F/S/D N MOS F-CellTM VDMOS AC-DC

 7.1. Size:783K  silan
 svf7n60cf svf7n60cs svf7n60ck svf7n60cmj svf7n60cd svf7n60ct.pdf pdf_icon

SVF7N60S

SVF7N60CF/S/K/MJ/D/T 7A600V N SVF7N60CF/S/K/MJ/D/T N MOS F-CellTM VDMOS

 7.2. Size:452K  silan
 svf7n60cf svf7n60cs svf7n60cstr svf7n60ck svf7n60cmj svf7n60cd svf7n60cdtr svf7n60ct.pdf pdf_icon

SVF7N60S

SVF7N60CF/S/K/MJ/D/T 7A600V N 2 SVF7N60CF/S/K/MJ/D/T N MOS 1213 F-CellTM VDMOS TO-251J-3L3

 7.3. Size:627K  silan
 svf7n60t svf7n60f.pdf pdf_icon

SVF7N60S

SVF7N60T/F_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching

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Datasheet: SVF740MJ , SVF7N60CF , SVF7N60CS , SVF7N60CK , SVF7N60CMJ , SVF7N60CD , SVF7N60CT , SVF7N60F , IRF540N , SVF7N60D , SVF7N65CF , SVF7N65CD , SVF7N65CMJ , SVF7N65CK , SVF7N65CS , SVF7N65CFQ , SVF7N65CT .

Keywords - SVF7N60S MOSFET datasheet

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