SVF7N60S Specs and Replacement

Type Designator: SVF7N60S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 122 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32.7 nS

Cossⓘ - Output Capacitance: 96 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO263

SVF7N60S substitution

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SVF7N60S datasheet

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 svf7n60f svf7n60s svf7n60d.pdf pdf_icon

SVF7N60S

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SVF7N60S

SVF7N60CF/S/K/MJ/D/T 7A 600V N SVF7N60CF/S/K/MJ/D/T N MOS F-CellTM VDMOS ... See More ⇒

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SVF7N60S

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 7.3. Size:627K  silan
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SVF7N60S

SVF7N60T/F_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching... See More ⇒

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Detailed specifications: SVF740MJ, SVF7N60CF, SVF7N60CS, SVF7N60CK, SVF7N60CMJ, SVF7N60CD, SVF7N60CT, SVF7N60F, IRF540, SVF7N60D, SVF7N65CF, SVF7N65CD, SVF7N65CMJ, SVF7N65CK, SVF7N65CS, SVF7N65CFQ, SVF7N65CT

Keywords - SVF7N60S MOSFET specs

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