SVF7N60D MOSFET. Datasheet pdf. Equivalent
Type Designator: SVF7N60D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 21.1 nC
trⓘ - Rise Time: 32.7 nS
Cossⓘ - Output Capacitance: 96 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO252
SVF7N60D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVF7N60D Datasheet (PDF)
svf7n60f svf7n60s svf7n60d.pdf
SVF7N60F/S/D 7A600V N SVF7N60F/S/D N MOS F-CellTM VDMOS AC-DC
svf7n60cf svf7n60cs svf7n60ck svf7n60cmj svf7n60cd svf7n60ct.pdf
SVF7N60CF/S/K/MJ/D/T 7A600V N SVF7N60CF/S/K/MJ/D/T N MOS F-CellTM VDMOS
svf7n60cf svf7n60cs svf7n60cstr svf7n60ck svf7n60cmj svf7n60cd svf7n60cdtr svf7n60ct.pdf
SVF7N60CF/S/K/MJ/D/T 7A600V N 2 SVF7N60CF/S/K/MJ/D/T N MOS 1213 F-CellTM VDMOS TO-251J-3L3
svf7n60t svf7n60f.pdf
SVF7N60T/F_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
