SVF7N65CD MOSFET. Datasheet pdf. Equivalent
Type Designator: SVF7N65CD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 89 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 21.2 nC
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 98 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO252
SVF7N65CD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVF7N65CD Datasheet (PDF)
svf7n65cf svf7n65cd svf7n65cmj svf7n65ck svf7n65cs svf7n65cfq.pdf
SVF7N65CF/D/MJ/K/S/FQ 7A650V N SVF7N65CF/D/MJ/K/S/FQ N MOS F-CellTM VDMOS
svf7n65cf svf7n65cd svf7n65cmj svf7n65ck svf7n65ct.pdf
SVF7N65CF/D/MJ/K/T 7A650V N 2SVF7N65CF/D/MJ/K/T N MOS 1 F-CellTM VDMOS 123 TO-262-3L3
svf7n65cf svf7n65cdtr svf7n65cmj svf7n65cmjl svf7n65ck svf7n65ct.pdf
SVF7N65CF/D/MJ/MJL/K/T 7A650V N 2 1SVF7N65CF/D/MJ/MJL/K/T N MOS 231 F-CellTM VDMOS TO-262-3L3 12
svf7n65f svf7n65s svf7n65str svf7n65t.pdf
SVF7N65T/F/S 7A650V N 2 SVF7N65T/F/S N MOS 1 F-CellTM VDMOS 31. 2. 3.
svf7n65t svf7n65f svf7n65s.pdf
SVF7N65T/F/S 7A650V N SVF7N65T/F/S N MOS F-CellTM VDMOS AC-DC
svf7n65f-t.pdf
SVF7N65T/F_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SVF5N65D
