SVF7N65CD Specs and Replacement

Type Designator: SVF7N65CD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 89 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 98 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO252

SVF7N65CD substitution

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SVF7N65CD datasheet

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SVF7N65CD

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SVF7N65CD

SVF7N65CF/D/MJ/K/T 7A 650V N 2 SVF7N65CF/D/MJ/K/T N MOS 1 F-CellTM VDMOS 1 2 3 TO-262-3L 3 ... See More ⇒

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SVF7N65CD

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Detailed specifications: SVF7N60CK, SVF7N60CMJ, SVF7N60CD, SVF7N60CT, SVF7N60F, SVF7N60S, SVF7N60D, SVF7N65CF, IRFZ44, SVF7N65CMJ, SVF7N65CK, SVF7N65CS, SVF7N65CFQ, SVF7N65CT, SVF7N65S, SVF7N80T, SVF7N80F

Keywords - SVF7N65CD MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs