SVF8N60T MOSFET Datasheet: N-Ch, 600V, 8A. Full specification with pinout and replacement list

SVF8N60T Specs and Replacement

Type Designator: SVF8N60T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 51 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO220

SVF8N60T substitution

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SVF8N60T datasheet

..1. Size:433K silan
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SVF8N60T/F_Datasheet 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching ... See More ⇒

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