All MOSFET. SVF8N60T Datasheet

 

SVF8N60T Datasheet and Replacement


   Type Designator: SVF8N60T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220
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SVF8N60T Datasheet (PDF)

 ..1. Size:433K  silan
 svf8n60t svf8n60f.pdf pdf_icon

SVF8N60T

SVF8N60T/F_Datasheet 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching

 7.1. Size:336K  silan
 svf8n60f.pdf pdf_icon

SVF8N60T

SVF8N60F 8A600V N 2SVF8N60F N MOS F-CellTM VDMOS 1 3

 8.1. Size:384K  silan
 svf8n65rmj svf8n65rdtr.pdf pdf_icon

SVF8N60T

SVF8N65RD(MJ) 8A650V N SVF8N65RD(MJ) N MOS 2 F-CellTM VDMOS 1

 8.2. Size:429K  silan
 svf8n65t svf8n65f.pdf pdf_icon

SVF8N60T

SVF8N65T/F 8A650V N SVF8N65T/F N MOS F-CellTM VDMOS AC-D

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History: 20N03L-TO252 | 2N6762JTXV

Keywords - SVF8N60T MOSFET datasheet

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