IXFH18N65X2 MOSFET Datasheet: N-Ch, 650V, 18A. Full specification with pinout and replacement list

IXFH18N65X2 Specs and Replacement

Type Designator: IXFH18N65X2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 290 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO247

IXFH18N65X2 substitution

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IXFH18N65X2 datasheet

..1. Size:336K ixys
ixfa18n65x2 ixfp18n65x2 ixfh18n65x2.pdf pdf_icon

X2-Class HiPerFETTM VDSS = 650V IXFA18N65X2 Power MOSFET ID25 = 18A IXFP18N65X2 RDS(on) 200m IXFH18N65X2 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 VDSS TJ = 25 C to 150 C 650 V (IXFP) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V VGS... See More ⇒

6.1. Size:183K ixys
ixfa18n60x ixfh18n60x ixfp18n60x.pdf pdf_icon

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFA18N60X Power MOSFET ID25 = 18A IXFP18N60X RDS(on) 230m IXFH18N60X TO-263 AA (IXFA) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to ... See More ⇒

6.2. Size:172K ixys
ixfh18n60p ixfv18n60p.pdf pdf_icon

IXFH 18N60P VDSS = 600 V PolarHVTM HiPerFET IXFV 18N60P ID25 = 18 A Power MOSFET IXFV 18N60PS RDS(on) 400 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Co... See More ⇒

7.1. Size:130K ixys
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