IXFP60N25X3 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFP60N25X3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 320 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 50 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 645 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO220
IXFP60N25X3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFP60N25X3 Datasheet (PDF)
ixfa60n25x3 ixfp60n25x3 ixfq60n25x3.pdf
X3-Class HiPerFETTM VDSS = 250VIXFA60N25X3Power MOSFET ID25 = 60AIXFP60N25X3 RDS(on) 23m IXFQ60N25X3N-Channel Enhancement ModeAvalanche RatedTO-263(IXFA)Fast Intrinsic DiodeGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220VDSS TJ = 25C to 150C 250 V(IXFP)VDGR TJ = 25C to 150C, RGS = 1M 250 VVGSS Co
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: EFC6612R-TF
History: EFC6612R-TF
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