IXFP80N25X3 MOSFET Datasheet: N-Ch, 250V, 80A. Full specification with pinout and replacement list

IXFP80N25X3 Specs and Replacement

Type Designator: IXFP80N25X3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 390 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 890 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO220AB

IXFP80N25X3 substitution

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IXFP80N25X3 datasheet

..1. Size:245K ixys
ixfa80n25x3 ixfp80n25x3 ixfq80n25x3 ixfh80n25x3.pdf pdf_icon

Preliminary Technical Information X3-Class HiPerFETTM VDSS = 250V IXFA80N25X3 Power MOSFET ID25 = 80A IXFP80N25X3 RDS(on) 16m IXFQ80N25X3 TO-263 AA (IXFA) IXFH80N25X3 N-Channel Enhancement Mode Avalanche Rated G S Fast Intrinsic Diode D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C250D S D (Tab) V TO-3P (IXFQ) VDGR... See More ⇒

9.1. Size:106K ixys
ixfp8n50pm.pdf pdf_icon

Preliminary Technical Information IXFP 8N50PM VDSS = 500 V PolarHVTMHiPerFET ID25 = 4.4 A Power MOSFET RDS(on) 0.8 (Electrically Isolated Tab) trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings (IXTP...M) OUTLINE VDSS TJ = 25 C to ... See More ⇒

9.2. Size:368K ixys
ixfa8n85xhv ixfp8n85x ixfq8n85x.pdf pdf_icon

PreliminaryTechnical Information X-Class HiPERFET VDSS = 850V IXFA8N85XHV Power MOSFET ID25 = 8A IXFP8N85X RDS(on) 850m IXFQ8N85X N-Channel Enhancement Mode TO-263HV (IXFA) G S D (Tab) TO-220 (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 850 V VDGR TJ = 25 C to 150 C, RGS = 1M 850 V VGSS Continuous ... See More ⇒

9.3. Size:160K ixys
ixfa8n50p3 ixfp8n50p3.pdf pdf_icon

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 500V IXFA8N50P3 Power MOSFETs ID25 = 8A IXFP8N50P3 RDS(on) 800m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXFA) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 500 V TO-220AB (IXFP) VDGR TJ = 25 C to 150 C, RGS = 1M ... See More ⇒

Detailed specifications: IXFH18N65X2, IXFH40N85X, IXFH50N85X, IXFH90N20X3, IXFK50N85X, IXFK80N65X2, IXFP34N65X2M, IXFP60N25X3, IRF530, IXFP90N20X3, IXFQ60N25X3, IXFQ80N25X3, IXFQ90N20X3, IXFT40N85XHV, IXFT50N85XHV, IXFH80N25X3, IXTH240N15X4