IXFQ60N25X3 PDF and Equivalents Search

 

IXFQ60N25X3 Specs and Replacement

Type Designator: IXFQ60N25X3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 320 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 645 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO3P

IXFQ60N25X3 substitution

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IXFQ60N25X3 datasheet

 ..1. Size:288K  ixys
 ixfa60n25x3 ixfp60n25x3 ixfq60n25x3.pdf pdf_icon

IXFQ60N25X3

X3-Class HiPerFETTM VDSS = 250V IXFA60N25X3 Power MOSFET ID25 = 60A IXFP60N25X3 RDS(on) 23m IXFQ60N25X3 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 VDSS TJ = 25 C to 150 C 250 V (IXFP) VDGR TJ = 25 C to 150 C, RGS = 1M 250 V VGSS Co... See More ⇒

 7.1. Size:166K  ixys
 ixfh60n60x ixfq60n60x.pdf pdf_icon

IXFQ60N25X3

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFQ60N60X Power MOSFET ID25 = 60A IXFH60N60X RDS(on) 55m N-Channel Enhancement Mode Avalanche Rated TO-3P (IXFQ) Fast Intrinsic Diode G D S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V TO-247 (IXFH) VDGR TJ = 25 C to 150 C, RGS = 1... See More ⇒

Detailed specifications: IXFH50N85X, IXFH90N20X3, IXFK50N85X, IXFK80N65X2, IXFP34N65X2M, IXFP60N25X3, IXFP80N25X3, IXFP90N20X3, NCEP15T14, IXFQ80N25X3, IXFQ90N20X3, IXFT40N85XHV, IXFT50N85XHV, IXFH80N25X3, IXTH240N15X4, IXTP34N65X2, IXTT240N15X4HV

Keywords - IXFQ60N25X3 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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