IXTT240N15X4HV PDF and Equivalents Search

 

IXTT240N15X4HV Specs and Replacement

Type Designator: IXTT240N15X4HV

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 940 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 240 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 1450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm

Package: TO268HV

IXTT240N15X4HV substitution

- MOSFET ⓘ Cross-Reference Search

 

IXTT240N15X4HV datasheet

 ..1. Size:337K  ixys
ixtt240n15x4hv ixth240n15x4.pdf pdf_icon

IXTT240N15X4HV

Advance Technical Information X4-Class VDSS = 150V IXTT240N15X4HV Power MOSFETTM ID25 = 240A IXTH240N15X4 RDS(on) 4.4m N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXTT..HV) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 175 C 150 V D (Tab) VDGR TJ = 25 C to 175 C, RGS = 1M 150 V TO-247 (IXTH) VGSS Cont... See More ⇒

 9.1. Size:202K  ixys
ixth2n300p3hv ixtt2n300p3hv.pdf pdf_icon

IXTT240N15X4HV

Advance Technical Information High Voltage VDSS = 3000V IXTT2N300P3HV Power MOSFET ID25 = 2A IXTH2N300P3HV RDS(on) 21 TO-268HV (IXTT) N-Channel Enhancement Mode G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 3000 V VDGR TJ = 25 C to 150 C, RGS = 1M 3000 V VGSS Continuous 20 V V... See More ⇒

 9.2. Size:230K  ixys
ixtt26n60p ixtv26n60p ixtv26n60ps ixth26n60p ixtq26n60p.pdf pdf_icon

IXTT240N15X4HV

IXTH26N60P VDSS = 600 V PolarHVTM IXTQ26N60P ID25 = 26 A Power MOSFET IXTT26N60P RDS(on) 270 m N-Channel Enhancement Mode IXTV26N60P Avalanche Rated TO-247 (IXTH) IXTV26N60PS G D S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V TO-3P (IXTQ) VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGSS Continuous 30 V VGSM Tran... See More ⇒

 9.3. Size:338K  ixys
ixtq26n50p ixtt26n50p ixtv26n50p.pdf pdf_icon

IXTT240N15X4HV

IXTQ 26N50P VDSS = 500 V PolarHVTM IXTT 26N50P ID25 = 26 A Power MOSFET IXTV 26N50P RDS(on) 230 m IXTV 26N50PS N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 500 V D S D (TAB) VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V TO-268 (IXTT) VGSS Continuos 30 V ... See More ⇒

Detailed specifications: IXFQ60N25X3, IXFQ80N25X3, IXFQ90N20X3, IXFT40N85XHV, IXFT50N85XHV, IXFH80N25X3, IXTH240N15X4, IXTP34N65X2, IRFP250, AIMW120R045M1, AUIRLS8409-7P, BF2040, BF2040R, BF2040W, BSC007N04LS6, BSC010N04LS6, BSC010N04LST

Keywords - IXTT240N15X4HV MOSFET specs

 IXTT240N15X4HV cross reference

 IXTT240N15X4HV equivalent finder

 IXTT240N15X4HV pdf lookup

 IXTT240N15X4HV substitution

 IXTT240N15X4HV replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

↑ Back to Top
.