IXTT240N15X4HV
MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTT240N15X4HV
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 940
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 240
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 195
nC
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 1450
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0044
Ohm
Package: TO268HV
IXTT240N15X4HV
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTT240N15X4HV
Datasheet (PDF)
..1. Size:337K ixys
ixtt240n15x4hv ixth240n15x4.pdf
Advance Technical InformationX4-Class VDSS = 150VIXTT240N15X4HVPower MOSFETTM ID25 = 240AIXTH240N15X4 RDS(on) 4.4m N-Channel Enhancement ModeAvalanche RatedTO-268HV (IXTT..HV)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 175C 150 V D (Tab)VDGR TJ = 25C to 175C, RGS = 1M 150 VTO-247 (IXTH)VGSS Cont
9.1. Size:202K ixys
ixth2n300p3hv ixtt2n300p3hv.pdf
Advance Technical InformationHigh Voltage VDSS = 3000VIXTT2N300P3HVPower MOSFETID25 = 2AIXTH2N300P3HV RDS(on) 21 TO-268HV (IXTT)N-Channel Enhancement ModeGS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 3000 VVDGR TJ = 25C to 150C, RGS = 1M 3000 VVGSS Continuous 20 VV
9.2. Size:230K ixys
ixtt26n60p ixtv26n60p ixtv26n60ps ixth26n60p ixtq26n60p.pdf
IXTH26N60P VDSS = 600 VPolarHVTMIXTQ26N60P ID25 = 26 APower MOSFET IXTT26N60P RDS(on) 270 m N-Channel Enhancement ModeIXTV26N60PAvalanche RatedTO-247 (IXTH)IXTV26N60PSGDSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 V TO-3P (IXTQ)VDGR TJ = 25C to 150C; RGS = 1 M 600 VVGSS Continuous 30 VVGSM Tran
9.3. Size:338K ixys
ixtq26n50p ixtt26n50p ixtv26n50p.pdf
IXTQ 26N50P VDSS = 500 VPolarHVTMIXTT 26N50P ID25 = 26 APower MOSFET IXTV 26N50P RDS(on) 230 m IXTV 26N50PSN-Channel Enhancement ModeAvalanche RatedTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25 C to 150 C 500 VDS D (TAB)VDGR TJ = 25 C to 150 C; RGS = 1 M 500 VTO-268 (IXTT)VGSS Continuos 30 V
9.4. Size:172K ixys
ixth2n170d2 ixtt2n170d2.pdf
Depletion Mode VDSX = 1700VIXTT2N170D2MOSFETs ID(on) > 2AIXTH2N170D2 RDS(on) 6.5 N-ChannelTO-268 (IXTT)GSD (Tab)TO-247 (IXTH)Symbol Test Conditions Maximum RatingsVDSX TJ = 25C to 150C 1700 VVDGX TJ = 25C to 150C, RGS = 1M 1700 VVGSX Continuous 20 VGVGSM Transient 30 VDD (Tab)SPD TC = 25C 568 WG = Gate
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