All MOSFET. AIMW120R045M1 Datasheet

 

AIMW120R045M1 Datasheet and Replacement


   Type Designator: AIMW120R045M1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 228 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 52 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 107 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm
   Package: TO247
 

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AIMW120R045M1 Datasheet (PDF)

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AIMW120R045M1

AIMW120R045M1 AIMW120R045M1 CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Revolutionary semiconductor material - Silicon Carbide Very low switching losses Threshold-free on state characteristic IGBT-compatible driving voltage (15V for turn-on) 0V turn-off gate voltage Benchmark gate threshold voltage, V =4.5V GS(th) Fully c

Datasheet: IXFQ80N25X3 , IXFQ90N20X3 , IXFT40N85XHV , IXFT50N85XHV , IXFH80N25X3 , IXTH240N15X4 , IXTP34N65X2 , IXTT240N15X4HV , P0903BDG , AUIRLS8409-7P , BF2040 , BF2040R , BF2040W , BSC007N04LS6 , BSC010N04LS6 , BSC010N04LST , BSC011N03LST .

History: NVMFD020N06C | AFP8452 | IPD90N04S3-H4

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