AIMW120R045M1 PDF and Equivalents Search

 

AIMW120R045M1 Specs and Replacement

Type Designator: AIMW120R045M1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 228 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 52 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 107 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm

Package: TO247

AIMW120R045M1 substitution

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AIMW120R045M1 datasheet

 ..1. Size:1365K  infineon
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AIMW120R045M1

AIMW120R045M1 AIMW120R045M1 CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Revolutionary semiconductor material - Silicon Carbide Very low switching losses Threshold-free on state characteristic IGBT-compatible driving voltage (15V for turn-on) 0V turn-off gate voltage Benchmark gate threshold voltage, V =4.5V GS(th) Fully c... See More ⇒

Detailed specifications: IXFQ80N25X3, IXFQ90N20X3, IXFT40N85XHV, IXFT50N85XHV, IXFH80N25X3, IXTH240N15X4, IXTP34N65X2, IXTT240N15X4HV, IRF1407, AUIRLS8409-7P, BF2040, BF2040R, BF2040W, BSC007N04LS6, BSC010N04LS6, BSC010N04LST, BSC011N03LST

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