All MOSFET. AIMW120R045M1 Datasheet

 

AIMW120R045M1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AIMW120R045M1
   Marking Code: A120M1045
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 228 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.7 V
   |Id|ⓘ - Maximum Drain Current: 52 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 57 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 107 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm
   Package: TO247

 AIMW120R045M1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AIMW120R045M1 Datasheet (PDF)

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 aimw120r045m1.pdf

AIMW120R045M1 AIMW120R045M1

AIMW120R045M1 AIMW120R045M1 CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Revolutionary semiconductor material - Silicon Carbide Very low switching losses Threshold-free on state characteristic IGBT-compatible driving voltage (15V for turn-on) 0V turn-off gate voltage Benchmark gate threshold voltage, V =4.5V GS(th) Fully c

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