AIMW120R045M1 MOSFET. Datasheet pdf. Equivalent
Type Designator: AIMW120R045M1
Marking Code: A120M1045
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 228 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.7 V
|Id|ⓘ - Maximum Drain Current: 52 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 57 nC
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 107 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm
Package: TO247
AIMW120R045M1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AIMW120R045M1 Datasheet (PDF)
..1. Size:1365K infineon
aimw120r045m1.pdf
aimw120r045m1.pdf
AIMW120R045M1 AIMW120R045M1 CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Revolutionary semiconductor material - Silicon Carbide Very low switching losses Threshold-free on state characteristic IGBT-compatible driving voltage (15V for turn-on) 0V turn-off gate voltage Benchmark gate threshold voltage, V =4.5V GS(th) Fully c
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
