BSC065N06LS5 Datasheet and Replacement
Type Designator: BSC065N06LS5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: SUPERSO8
BSC065N06LS5 substitution
BSC065N06LS5 Datasheet (PDF)
bsc065n06ls5.pdf

BSC065N06LS5MOSFETSuperSO8OptiMOSTM Power-Transistor, 60 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel, logic level4 Qualified according to JEDEC1) for target applications132 2 Pb-free lead plating; RoHS compliant3 14 Halogen-free according t
bsc067n06ls3g.pdf

TypeBSC067N06LS3 GProduct Summary OptiMOSTM3 Power-TransistorFeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max 6.7 mW Optimized technology for DC/DC convertersID 50 A Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superior thermal resistance N-channel, logic level 100% avalanche tes
bsc060p03ns3eg.pdf

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Datasheet: BSC0402NS , BSC040N10NS5SC , BSC0501NSI , BSC0502NSI , BSC0503NSI , BSC0504NSI , BSC050N10NS5 , BSC059N04LS6 , IRF1405 , BSC0702LS , BSC070N10LS5 , BSC070N10NS5SC , BSC072N04LD , BSC074N15NS5 , BSC076N04ND , BSC0804LS , BSC0805LS .
History: IPI320N20N3
Keywords - BSC065N06LS5 MOSFET datasheet
BSC065N06LS5 cross reference
BSC065N06LS5 equivalent finder
BSC065N06LS5 lookup
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BSC065N06LS5 replacement
History: IPI320N20N3



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