BSC112N06LD MOSFET Datasheet: N-Ch, 60V, 12A. Full specification with pinout and replacement list

BSC112N06LD Specs and Replacement

Type Designator: BSC112N06LD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 590 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0112 Ohm

Package: TDSON-8-4

BSC112N06LD substitution

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BSC112N06LD datasheet

..1. Size:1180K infineon
bsc112n06ld.pdf pdf_icon

BSC112N06LD MOSFET PG-TDSON-8-4 OptiMOSTM-T2 Power Transistor, 60 V 8 1 7 Features 2 6 3 5 4 Dual N-channel, Logic level Fast switching MOSFETs for SMPS Optimized technology for Synchronous Rectification Pb-free plating; RoHS compliant 1 8 2 7 100% Avalanche tested 3 6 5 4 Superior Thermal Resistance Halogen-free according to IEC61249-2-21 Product Va... See More ⇒

9.1. Size:976K 1
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BSC110N15NS5 MOSFET SuperSO8 OptiMOSTM 5 Power-Transistor, 150 V 5 8 6 7 Features 7 6 8 5 N-channel, normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 150 C operating temperature 4 Pb-free lead plating; RoHS compliant 1 3 2 2 Qualified according to JEDEC1) for target application 3 1 4 Ideal for hig... See More ⇒

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BSC118N10NS G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 11.8 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 71 A D Very low on-resistance R DS(on) 150 C operating temperature PG-TDSON-8 Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ide... See More ⇒