All MOSFET. BSF450NE7NH3G Datasheet

 

BSF450NE7NH3G Datasheet and Replacement


   Type Designator: BSF450NE7NH3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 11.3 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: WDSON-2
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BSF450NE7NH3G Datasheet (PDF)

 ..1. Size:1195K  infineon
 bsf450ne7nh3g.pdf pdf_icon

BSF450NE7NH3G

BSF450NE7NH3 GMOSFETCanPAK SOptiMOS3 Power-MOSFET, 75 VFeatures Optimized technology for DC/DC converters Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance Dual sided cooling Low parasitic inductance Low profile (

 2.1. Size:1331K  infineon
 bsf450ne7nh3.pdf pdf_icon

BSF450NE7NH3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS3 Power-MOSFET, 75 VBSF450NE7NH3 GData SheetRev. 2.2FinalPower Management & MultimarketOptiMOS3 Power-MOSFET, 75 VBSF450NE7NH3 GCanPAK S1 DescriptionFeatures Optimized technology for DC/DC converters Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NCE60P14K | R6006JND3 | 1N70Z | AP30H80Q | 2SK1157 | 2SJ182L | 2SK893

Keywords - BSF450NE7NH3G MOSFET datasheet

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