BSF450NE7NH3G Datasheet and Replacement
Type Designator: BSF450NE7NH3G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11.3 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: WDSON-2
BSF450NE7NH3G substitution
BSF450NE7NH3G Datasheet (PDF)
bsf450ne7nh3g.pdf

BSF450NE7NH3 GMOSFETCanPAK SOptiMOS3 Power-MOSFET, 75 VFeatures Optimized technology for DC/DC converters Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance Dual sided cooling Low parasitic inductance Low profile (
bsf450ne7nh3.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS3 Power-MOSFET, 75 VBSF450NE7NH3 GData SheetRev. 2.2FinalPower Management & MultimarketOptiMOS3 Power-MOSFET, 75 VBSF450NE7NH3 GCanPAK S1 DescriptionFeatures Optimized technology for DC/DC converters Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance
Datasheet: BSC0996NS , BSC110N15NS5 , BSC112N06LD , BSC13DN30NSFD , BSC146N10LS5 , BSC155N06ND , BSC160N15NS5 , BSC350N20NSFD , 50N06 , BSS340NW , BSZ009NE2LS5 , BSZ010NE2LS5 , BSZ011NE2LS5I , BSZ013NE2LS5I , BSZ017NE2LS5I , BSZ018N04LS6 , BSZ021N04LS6 .
History: BSO201SPH | 4N100G-TF1-T
Keywords - BSF450NE7NH3G MOSFET datasheet
BSF450NE7NH3G cross reference
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BSF450NE7NH3G substitution
BSF450NE7NH3G replacement
History: BSO201SPH | 4N100G-TF1-T



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