All MOSFET. BSS340NW Datasheet

 

BSS340NW Datasheet and Replacement


   Type Designator: BSS340NW
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.88 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6.3 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: SOT-323
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BSS340NW Datasheet (PDF)

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BSS340NW

BSS340NWMOSFETSOT-323-3OptiMOS2 Small-Signal-Transistor, 30 VFeatures N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Qualified according to AEC Q101 100% lead-free; RoHS compliant Halogen-free according to IEC61249-2-21Table 1 Key Performance ParametersDrainPin 2Parameter Value UnitV 30 VDSGatePin 1R V =4.5 V 60

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