BSZ0589NS
MOSFET. Datasheet pdf. Equivalent
Type Designator: BSZ0589NS
Marking Code: 0589NS
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 17
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 11
nC
trⓘ - Rise Time: 2.4
nS
Cossⓘ -
Output Capacitance: 220
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0044
Ohm
Package:
TSDSON-8
BSZ0589NS
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSZ0589NS
Datasheet (PDF)
..1. Size:1462K infineon
bsz0589ns.pdf
BSZ0589NSMOSFETTSDSON-8 FLOptiMOSTM5 Power-MOSFET, 30 V(enlarged source interconnection)Features Optimized for high performance Wireless charger Very low FOM for high frequency SMPSQOSS Low FOM for high frequency SMPSSW Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R @ V =4.5 VDS(on) GS 100% avalanche tested Superior th
8.1. Size:646K infineon
bsz058n03msg.pdf
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8.2. Size:619K infineon
bsz058n03lsg.pdf
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8.3. Size:644K infineon
bsz058n03ms.pdf
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8.4. Size:616K infineon
bsz058n03ls.pdf
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