All MOSFET. IAUC100N10S5N040 Datasheet

 

IAUC100N10S5N040 Datasheet and Replacement


   Type Designator: IAUC100N10S5N040
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 660 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TDSON-8
 

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IAUC100N10S5N040 Datasheet (PDF)

 0.1. Size:227K  infineon
 iauc100n10s5n040.pdf pdf_icon

IAUC100N10S5N040

IAUC100N10S5N040OptiMOSTM-5 Power-TransistorProduct SummaryVDS 100 VRDS(on) 4mID 100 AFeatures N-channel - Enhancement mode - Normal levelPG-TDSON-8 AEC qualified MSL1 up to 260C peak reflow 100% Avalanche tested Feasible for automatic optical inspection (AOI)1Type Package MarkingIAUC100N10S5N040 PG-TDSON-8 5N1N040Maximum ratings, at T =25

 2.1. Size:563K  infineon
 iauc100n10s5l040.pdf pdf_icon

IAUC100N10S5N040

IAUC100N10S5L040OptiMOSTM-5 Power-TransistorProduct SummaryVDS 100 VRDS(on) 4mWID 100 AFeatures N-channel - Enhancement mode - Logic levelPG-TDSON-8 AEC qualified MSL1 up to 260C peak reflow 100% Avalanche tested Feasible for automatic optical inspection (AOI)1Type Package MarkingIAUC100N10S5L040 PG-TDSON-8 5N10L040Maximum ratings, at T =25 C

 6.1. Size:665K  infineon
 iauc100n04s6n015.pdf pdf_icon

IAUC100N10S5N040

IAUC100N04S6N015OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 1.5mWID 100 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche teste

 6.2. Size:665K  infineon
 iauc100n04s6l020.pdf pdf_icon

IAUC100N10S5N040

IAUC100N04S6L020OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 2.0mWID 100 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche tested

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Datasheet: BSZ0703LS , BSZ070N08LS5 , BSZ0909ND , BSZ0994NS , BSZ099N06LS5 , BSZ146N10LS5 , BSZ300N15NS5 , BTS247Z , 2N7000 , IAUC120N04S6L008 , IAUC120N04S6N009 , IAUS180N04S4N015 , IMW120R030M1H , IMW120R045M1 , IMW120R060M1H , IMW120R090M1H , IMW120R140M1H .

History: SSF65R090S2 | 2SK682 | TK35E08N1 | R6046ANZ1 | 2SK2636 | DMG9926UDM | WMM22N50C4

Keywords - IAUC100N10S5N040 MOSFET datasheet

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