Справочник MOSFET. IAUC100N10S5N040

 

IAUC100N10S5N040 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IAUC100N10S5N040
   Маркировка: 5N1N040
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 167 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 60 nC
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 660 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
   Тип корпуса: TDSON-8

 Аналог (замена) для IAUC100N10S5N040

 

 

IAUC100N10S5N040 Datasheet (PDF)

 0.1. Size:227K  infineon
 iauc100n10s5n040.pdf

IAUC100N10S5N040 IAUC100N10S5N040

IAUC100N10S5N040OptiMOSTM-5 Power-TransistorProduct SummaryVDS 100 VRDS(on) 4mID 100 AFeatures N-channel - Enhancement mode - Normal levelPG-TDSON-8 AEC qualified MSL1 up to 260C peak reflow 100% Avalanche tested Feasible for automatic optical inspection (AOI)1Type Package MarkingIAUC100N10S5N040 PG-TDSON-8 5N1N040Maximum ratings, at T =25

 2.1. Size:563K  infineon
 iauc100n10s5l040.pdf

IAUC100N10S5N040 IAUC100N10S5N040

IAUC100N10S5L040OptiMOSTM-5 Power-TransistorProduct SummaryVDS 100 VRDS(on) 4mWID 100 AFeatures N-channel - Enhancement mode - Logic levelPG-TDSON-8 AEC qualified MSL1 up to 260C peak reflow 100% Avalanche tested Feasible for automatic optical inspection (AOI)1Type Package MarkingIAUC100N10S5L040 PG-TDSON-8 5N10L040Maximum ratings, at T =25 C

 6.1. Size:665K  infineon
 iauc100n04s6n015.pdf

IAUC100N10S5N040 IAUC100N10S5N040

IAUC100N04S6N015OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 1.5mWID 100 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche teste

 6.2. Size:665K  infineon
 iauc100n04s6l020.pdf

IAUC100N10S5N040 IAUC100N10S5N040

IAUC100N04S6L020OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 2.0mWID 100 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche tested

 6.3. Size:773K  infineon
 iauc100n08s5n043.pdf

IAUC100N10S5N040 IAUC100N10S5N040

IAUC100N08S5N043OptiMOS-5 Power-TransistorProduct SummaryVDS 80 VRDS(on) 4.3mWID 100 AFeatures N-channel - Enhancement modePG-TDSON-8 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 1 100% Avalanche tested1Type Package MarkingPG-TDSON-8 5N08043IAUC100N08S5N043Maximum ratings,

 6.4. Size:664K  infineon
 iauc100n04s6l014.pdf

IAUC100N10S5N040 IAUC100N10S5N040

IAUC100N04S6L014OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 1.4mWID 100 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche tested

 6.5. Size:666K  infineon
 iauc100n04s6n028.pdf

IAUC100N10S5N040 IAUC100N10S5N040

IAUC100N04S6N028OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 2.8mWID 100 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche teste

 6.6. Size:666K  infineon
 iauc100n04s6n022.pdf

IAUC100N10S5N040 IAUC100N10S5N040

IAUC100N04S6N022OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 2.2mWID 100 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche teste

 6.7. Size:665K  infineon
 iauc100n04s6l025.pdf

IAUC100N10S5N040 IAUC100N10S5N040

IAUC100N04S6L025OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 2.5mWID 100 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche tested

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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