All MOSFET. IMW65R048M1H Datasheet

 

IMW65R048M1H MOSFET. Datasheet pdf. Equivalent


   Type Designator: IMW65R048M1H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 23 V
   |Id|ⓘ - Maximum Drain Current: 39 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12.4 nS
   Cossⓘ - Output Capacitance: 129 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
   Package: TO247

 IMW65R048M1H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IMW65R048M1H Datasheet (PDF)

 ..1. Size:1469K  infineon
imw65r048m1h.pdf

IMW65R048M1H IMW65R048M1H

IMW65R048M1HMOSFETPG-TO 247-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature and

 7.1. Size:1459K  infineon
imw65r027m1h.pdf

IMW65R048M1H IMW65R048M1H

IMW65R027M1HMOSFETPG-TO 247-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature and

 7.2. Size:1453K  infineon
imw65r072m1h.pdf

IMW65R048M1H IMW65R048M1H

IMW65R072M1HMOSFETPG-TO 247-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature and

 8.1. Size:1457K  infineon
imw65r107m1h.pdf

IMW65R048M1H IMW65R048M1H

IMW65R107M1HMOSFETPG-TO 247-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature and

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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