IMW65R048M1H - описание и поиск аналогов

 

IMW65R048M1H. Аналоги и основные параметры

Наименование производителя: IMW65R048M1H

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 125 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 23 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 39 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 12.4 ns

Cossⓘ - Выходная емкость: 129 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.064 Ohm

Тип корпуса: TO247

Аналог (замена) для IMW65R048M1H

- подборⓘ MOSFET транзистора по параметрам

 

IMW65R048M1H даташит

 ..1. Size:1469K  infineon
 imw65r048m1h.pdf pdf_icon

IMW65R048M1H

IMW65R048M1H MOSFET PG-TO 247-3 650 V CoolSiC M1 SiC Trench Power Device The 650 V CoolSiC is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap Tab SiC material characteristics, the 650V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and

 7.1. Size:1459K  infineon
 imw65r027m1h.pdf pdf_icon

IMW65R048M1H

IMW65R027M1H MOSFET PG-TO 247-3 650 V CoolSiC M1 SiC Trench Power Device The 650 V CoolSiC is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap Tab SiC material characteristics, the 650V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and

 7.2. Size:1453K  infineon
 imw65r072m1h.pdf pdf_icon

IMW65R048M1H

IMW65R072M1H MOSFET PG-TO 247-3 650 V CoolSiC M1 SiC Trench Power Device The 650 V CoolSiC is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap Tab SiC material characteristics, the 650V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and

 8.1. Size:1457K  infineon
 imw65r107m1h.pdf pdf_icon

IMW65R048M1H

IMW65R107M1H MOSFET PG-TO 247-3 650 V CoolSiC M1 SiC Trench Power Device The 650 V CoolSiC is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap Tab SiC material characteristics, the 650V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IMW120R030M1H , IMW120R045M1 , IMW120R060M1H , IMW120R090M1H , IMW120R140M1H , IMW120R220M1H , IMW120R350M1H , IMW65R027M1H , 5N65 , IMW65R072M1H , IMW65R107M1H , IMZ120R030M1H , IMZ120R060M1H , IMZ120R090M1H , IMZ120R140M1H , IMZ120R220M1H , IMZ120R350M1H .

History: AP2301 | BSO220N03MD | FDB86566-F085

 

 

 

 

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