IMZA65R027M1H MOSFET. Datasheet pdf. Equivalent

   Type Designator: IMZA65R027M1H
   Marking Code: 65R027M1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 189 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 23 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.7 V
   |Id|ⓘ - Maximum Drain Current: 59 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 63 nC
   trⓘ - Rise Time: 4.2 nS
   Cossⓘ - Output Capacitance: 244 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: TO247-4

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