IMZA65R027M1H Datasheet and Replacement
Type Designator: IMZA65R027M1H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 189 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 23 V
|Id| ⓘ - Maximum Drain Current: 59 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.2 nS
Cossⓘ - Output Capacitance: 244 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
Package: TO247-4
IMZA65R027M1H substitution
IMZA65R027M1H Datasheet (PDF)
imza65r027m1h.pdf

IMZA65R027M1HMOSFETPG-TO 247-4-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature a
imza65r072m1h.pdf

IMZA65R072M1HMOSFETPG-TO 247-4-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature a
imza65r048m1h.pdf

IMZA65R048M1HMOSFETPG-TO 247-4-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature a
Datasheet: IMW65R072M1H , IMW65R107M1H , IMZ120R030M1H , IMZ120R060M1H , IMZ120R090M1H , IMZ120R140M1H , IMZ120R220M1H , IMZ120R350M1H , IRF1407 , IMZA65R048M1H , IMZA65R072M1H , IPA029N06NM5S , IPA040N06NM5S , IPA040N08NM5S , IPA050N10NM5S , IPA052N08NM5S , IPA060N06NM5S .
Keywords - IMZA65R027M1H MOSFET datasheet
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