IMZA65R072M1H
MOSFET. Datasheet pdf. Equivalent
Type Designator: IMZA65R072M1H
Marking Code: 65R072M1
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 96
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 23
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.7
V
|Id|ⓘ - Maximum Drain Current: 28
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 22
nC
trⓘ - Rise Time: 8.6
nS
Cossⓘ -
Output Capacitance: 86
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.094
Ohm
Package:
TO247-4
IMZA65R072M1H
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IMZA65R072M1H
Datasheet (PDF)
..1. Size:1468K infineon
imza65r072m1h.pdf
IMZA65R072M1HMOSFETPG-TO 247-4-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature a
6.1. Size:1483K infineon
imza65r048m1h.pdf
IMZA65R048M1HMOSFETPG-TO 247-4-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature a
6.2. Size:1478K infineon
imza65r027m1h.pdf
IMZA65R027M1HMOSFETPG-TO 247-4-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature a
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