IMZA65R072M1H - аналоги и даташиты транзистора

 

IMZA65R072M1H - Даташиты. Аналоги. Основные параметры


   Наименование производителя: IMZA65R072M1H
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 96 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 23 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 28 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 8.6 ns
   Cossⓘ - Выходная емкость: 86 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.094 Ohm
   Тип корпуса: TO247-4
 

 Аналог (замена) для IMZA65R072M1H

   - подбор ⓘ MOSFET транзистора по параметрам

 

IMZA65R072M1H Datasheet (PDF)

 ..1. Size:1468K  infineon
 imza65r072m1h.pdf pdf_icon

IMZA65R072M1H

IMZA65R072M1HMOSFETPG-TO 247-4-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature a

 6.1. Size:1483K  infineon
 imza65r048m1h.pdf pdf_icon

IMZA65R072M1H

IMZA65R048M1HMOSFETPG-TO 247-4-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature a

 6.2. Size:1478K  infineon
 imza65r027m1h.pdf pdf_icon

IMZA65R072M1H

IMZA65R027M1HMOSFETPG-TO 247-4-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature a

Другие MOSFET... IMZ120R030M1H , IMZ120R060M1H , IMZ120R090M1H , IMZ120R140M1H , IMZ120R220M1H , IMZ120R350M1H , IMZA65R027M1H , IMZA65R048M1H , IRFP450 , IPA029N06NM5S , IPA040N06NM5S , IPA040N08NM5S , IPA050N10NM5S , IPA052N08NM5S , IPA060N06NM5S , IPA083N10NM5S , IPA126N10NM3S .

History: IPP057N06N3 | HM2807 | IPP057N08N3 | SSG4825P | TPCS8212 | R6004ENJ | AONS66909

 

 
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