IMZA65R072M1H - аналоги, параметры транзистора

IMZA65R072M1H даташит

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IMZA65R072M1H MOSFET PG-TO 247-4-3 650 V CoolSiC M1 SiC Trench Power Device The 650 V CoolSiC is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap Tab SiC material characteristics, the 650V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature a

6.1. Size:1483K infineon
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IMZA65R048M1H MOSFET PG-TO 247-4-3 650 V CoolSiC M1 SiC Trench Power Device The 650 V CoolSiC is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap Tab SiC material characteristics, the 650V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature a

6.2. Size:1478K infineon
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IMZA65R027M1H MOSFET PG-TO 247-4-3 650 V CoolSiC M1 SiC Trench Power Device The 650 V CoolSiC is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap Tab SiC material characteristics, the 650V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature a

Другие MOSFET... IMZ120R030M1H , IMZ120R060M1H , IMZ120R090M1H , IMZ120R140M1H , IMZ120R220M1H , IMZ120R350M1H , IMZA65R027M1H , IMZA65R048M1H , AO4407 , IPA029N06NM5S , IPA040N06NM5S , IPA040N08NM5S , IPA050N10NM5S , IPA052N08NM5S , IPA060N06NM5S , IPA083N10NM5S , IPA126N10NM3S .