All MOSFET. STD17N05 Datasheet

 

STD17N05 Datasheet and Replacement


   Type Designator: STD17N05
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 22 nC
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: DPAK
 

 STD17N05 substitution

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STD17N05 Datasheet (PDF)

 ..1. Size:180K  1
std17n05 std17n05-1 std17n05t4 std17n06 std17n06-1 std17n06t4.pdf pdf_icon

STD17N05

STD17N05STD17N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD17N05 50 V

 ..2. Size:180K  st
std17n05.pdf pdf_icon

STD17N05

STD17N05STD17N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD17N05 50 V

 0.1. Size:350K  1
std17n05l-1 std17n06l-1 std17n05lt4 std17n06lt4.pdf pdf_icon

STD17N05

STD17N05LSTD17N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTD17N05L 50 V

 0.2. Size:350K  st
std17n05l std17n06l.pdf pdf_icon

STD17N05

STD17N05LSTD17N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTD17N05L 50 V

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Keywords - STD17N05 MOSFET datasheet

 STD17N05 cross reference
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