IPA80R1K4P7 Datasheet. Specs and Replacement
Type Designator: IPA80R1K4P7
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 24 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 6.5 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO220FP
IPA80R1K4P7 substitution
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IPA80R1K4P7 datasheet
ipa80r1k4p7.pdf
IPA80R1K4P7 MOSFET PG-TO 220 FP 800V CoolMOS P7 Power Device The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(o... See More ⇒
ipa80r1k4ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPA80R1K4CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPA80R1K4CE TO-220 FP 1 Description CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performan... See More ⇒
ipa80r1k4ce.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA80R1K4CE FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
ipa80r1k2p7.pdf
IPA80R1K2P7 MOSFET PG-TO 220 FP 800V CoolMOS P7 Power Device The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(o... See More ⇒
Detailed specifications: IPA60R280P7S, IPA60R360CFD7, IPA60R600P7S, IPA70R450P7S, IPA70R600P7S, IPA70R750P7S, IPA70R900P7S, IPA80R1K2P7, IRLB3034, IPA80R280P7, IPA80R360P7, IPA80R450P7, IPA80R600P7, IPA80R750P7, IPA80R900P7, IPA95R1K2P7, IPA95R450P7
Keywords - IPA80R1K4P7 MOSFET specs
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